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| (R) BUW1015 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED s APPLICATIONS: HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 19" MONITORS 3 DESCRIPTION The BUW1015 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB IBM Ptot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 10 14 18 8 11 160 -65 to 150 150 Unit V V V A A A A W o o C C 1/7 February 2002 BUW1015 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T j = 125 o C Min. Typ. Max. 0.2 2 100 Unit mA mA A V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) V BE(sat) h FE Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I E = 10 mA I C = 10 A I C = 10 A I C = 10 A I C = 10 A IB = 2 A IB = 2 A V CE = 5 V V CE = 5 V 10 1.5 1.5 7 5 10 14 V V V T j = 100 o C ts tf ts tf V CC = 400 V I B1 = 2 A I C = 10 A I B1 = 2 A V ceflyback IC = 10 A I B2 = -6 A 1.5 110 4 220 s ns s ns f = 31250 Hz I B2 = -6 A = 1200 sin 106 t V 5 ts tf Pulsed: Pulse duration = 300 s, duty cycle 1.5 % IC = 6 A f = 64 KHz I B1 = 1 A V beoff = - 2 V V ceflyback = 1100 sin 106 t 5 3.7 200 V s ns 2/7 BUW1015 Safe Operating Area Thermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUW1015 Power Losses at 64 KHz Switching Time Inductive Load at 64KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the optimum drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. 4/7 BUW1015 Figure 1: Inductive Load Switching Test Circuit. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUW1015 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 6/7 BUW1015 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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